VLSI-TSA 2013 : VLSI Technology, Systems and Applications
Call For Papers
2013 International Symposium on
VLSI Technology, Systems and Applications
April 22-24, 2013
With its Hsinchu Science-based Industrial Park, in 2011 Taiwan generating over 70.2% of the global semiconductor foundry revenue, 24.4% of fabless revenue, 53.5% of independent IC packaging and testing revenue, Taiwan is undoubtedly a force to be reckoned with inthe semiconductor industry. The 2013 international symposium on VLSI Technology Systems and Applications will be held on April 22-24, 2013 at the Embassador Hotel, Hsinchu, Taiwan.
Original and unpublished papers on all aspects on VLSI technology and manufacturing are solicited.
SCOPE OF THE SYMPOSIUM
Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies
Steep Subthreshold devices and other energy efficiency related devices
Advanced gate stack science and technology
DRAM, SRAM and Emerging NVM technologies such as RRAM and MRAM
More-than-Moore Device integration and applications
Advanced Interconnect technology
Advanced packaging technology
FinFET, SOI and fully depleted devices
Device and interconnect reliability
Nanoelectronic materials /process/devices.
Process and device modeling
Thin Film and Flexible Electronics
Organic electronics and photonics
3D Integration technology
Analog/RF devices and technologies
Process control and advanced manufacturing technologies
Advanced process technology
MEMS and Sensors
Advanced lithography technology and next generation lithography
Camera-ready manuscript (2 pages including figures and tables) should be submitted electronically through the conference website at http://vlsitsa.itri.org.tw. Accepted papers MUST be presented by one of the authors at the conference to warrant the paper publication on the conference proceedings. The presentation must be in English and will be limited to 15 minutes with additional 5 minutes for discussion. All paper presenters are required to register for the symposium. All papers presented at the symposium will be published in the proceedings as submitted without revisions.