The IEEE ICSICT-2012 conference is the 11th in the series aiming to provide an international forum for the presentation and discussion of recent advances in solid-state and integrated circuit technology. The conference will be held on Oct.29-Nov.1, 2012 in Xi’an, China. All aspects of solid-state devices, circuits, processing technologies, materials and other related research are within the scope of the conference. The three days of contributed and invited presentations on the latest developments in diverse fields given in oral and poster sessions, panel discussions on leading edge technology issues, and other activities will provide extensive opportunities for technical information exchange as well as a stimulating environment for mutual communication among participants. An exhibition of equipment and materials for solid state and integrated circuit technologies will be held concurrently with the conference. In addition, there will be discussions devoted to opportunities for cooperation and joint ventures in the microelectronics business in China. Excellent Student Paper Award will be presented at the closing of the conference.


The Scope and Topics of the Conference

(Papers are solicited in, but not limited to the following areas)



Process & Device Technologies

1. Channel Engineering

2. High-k/Metal gate Technology

3. Advanced Source/Drain Technology

4. Interconnect Technology

5. Advanced 3D Integration

6. Novel Process Technologies

7. Ultra-Thin Body Transistors and Device Variability

8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms

9. CMOS Performance Enhancing and Novel Devices

10. Advanced FinFETs and Nanowire FETs

11. CNT, MTJ Devices and Nanowire Photodiodes

12. Low- Power and Steep Slope Switching Devices

13. Graphene Devices

14. Advanced Technologies for Ge MOSFETs

15. Organic semiconductor devices and technologies

16. Compound semiconductor devices and Technology

17. Ultra High Speed Transistors, HEMT/HBT etc.

18. Advanced Power Devices and Reliability

19. Flash Memory

20. IT Magnetic RAM

21. Resistive RAMs

22. Phase Change Memory

23. 3-Dimensional Memory

24. MEMS Technology

25. Thin Film Transistors

26. Biosensors

27. PV and Energy Harvesting

28. Front End of Line (FEOL) Reliability

29. Memory Reliability

30. Back-End of Line and ESD Reliability

31. High-Frequency and Multi-Gate Device & Modeling

32. Advanced Device Performance and Variation Modeling

33. Simulation of Memory Devices

34. Simulation of Non-Silicon Materials and Devices



Circuits & ICCAD

35. Processors

36. Analog Circuits

37. SOC

38. PLL and CDR

39. Low-Power Nyquist ADCs

40. Digital Circuits Resilient

41. High-Resolution and High Speed Data Converters

42. Digital Chip-to-Chip and On-Die Interfaces

43. Advanced Clock Generation

44. Clocking Building Blocks

45. High Speed On-Die Network Processor Clocking

46. Advanced SRAM & DRAM Circuits, Embbeded Memorres

47. Nonvolatile Memories Circuits

48. Advanced Transceivers Techniques

49. RF and New Wireless Transceivers

50. RF Circuits and Systems

51. Interference Robust RF Receivers

52. Signal Processing for Wireless

53. System-Level Modeling & Simulation/Verification

54. System-Level Synthesis & Optimization

55. High-Level/Behavioral/Logic Synthesis & Optimization

56. Physical Design

57. DFM