SCOPE

The goal of the conference is to present and discuss recent advances in theoretical and experimental investigations of crystal growth, characterization and control of material properties, as well as other basic research issues concerning silicon carbide (SiC) and other related materials such as III-nitrides wide bandgap semiconductors or graphene grown on SiC. New research results relevant to wafer production processes, device fabrication technologies and device applications will be also discussed.
The objective is to promote the production and commercialization of advanced devices, sensors and systems used for high temperature operation, high voltage, high frequency and high power amplification, as well as radiation hard operation.
The conference will be acting as an international forum for the exchange of ideas on recent scientific and technical issues among researches and engineers from both industrial and academic sectors.

TOPICS

Fundamentals (theoretical and experimental)
Bulk and epitaxial growth
New materials grown on SiC (graphene, III-N compounds, and diamond)
Material characterization
Surfaces and interfaces
Device fabrication processes
Devices (power switching, RF power, high-temperature and radiation-resistant devices and sensors, etc.)
Device physics (measurement, modelling, simulation and reliability)
Packaging and modular technology
Circuits and applications